Mosfet FDP047N10 for ON FAIRCHILD
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Specification of FDP047N10 ON:
Type Designator: FDP047N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 375 W
Maximum Drain-Source Voltage: 100 V
Maximum Gate-Source Voltage: 20 V
Maximum Gate-Threshold Voltage: 4.5 V
Maximum Drain Current: 164 A
Maximum Junction Temperature: 175 °C
Total Gate Charge: 210 nC
Maximum Drain-Source On-State Resistance: 0.0047 Ohm
Package: TO220
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Besides,we not only provide this on mosfet FDP047N10 but also Fairchild manufacturer,more other mosfets from fairchild is also provided as below partial list:
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