Transistor Stock NCE7190

Transistor NCE7190

The NCE7190 is a high-performance N-channel enhancement-mode power MOSFET from NCE Power Semiconductor, designed for efficient power switching and high-current applications. It uses advanced trench technology to achieve low drain-source on-resistance while maintaining high current-handling capability, making it suitable for applications where low conduction losses and reliable switching are important.

The device features a 71 V drain-source voltage rating, 90 A continuous drain current rating, and a typical RDS(on) of 5.9 mΩ at VGS = 10 V. It also supports a gate-source voltage of ±20 V and provides a maximum power dissipation of 170 W under specified conditions. The TO-220-3L package is designed to provide effective heat dissipation for high-power switching applications.

The NCE7190 is well suited for power supplies, DC-DC converters, battery management systems, UPS equipment, motor control, high-frequency switching circuits, and other power conversion applications. Its low on-resistance, high current capability, and characterized avalanche performance make it a practical choice for demanding power-switching designs.

Key Features:

• N-channel enhancement-mode power MOSFET
• 71 V drain-source voltage rating
• 90 A continuous drain current
• Typical RDS(on): 5.9 mΩ at VGS = 10 V
• ±20 V gate-source voltage rating
• Up to 320 A pulsed drain current
• Maximum power dissipation of 170 W
• Advanced trench technology for low conduction losses
• Fully characterized avalanche voltage and current
• High-density cell design
• TO-220-3L through-hole package
• Suitable for high-frequency and hard-switching applications

Shenzhen Chengsuchuang Technology Co.,Ltd not only provide the Transistor Stock NCE7190,but also can supply other type parts number.Contact us to talk details if you are looking for  something.